extremely low r v ds i d (at v gs =10v) 6a r ds(on) (at v gs = 10v) < 44m w r ds(on) (at v gs = 4.5v) < 53m w symbol v ds the AON2260 combines advanced trench mosfet technology with a low resistance package to provide ds(on) .this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backligh ting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 60v drain-source voltage 60 g d s v gs i dm t j , t stg symbol t 10s steady-state t a =25c pulsed drain current c c i d a t a =70c 2.8 30 4.7 continuous drain current 6 thermal characteristics units maximum junction-to-ambient a a parameter typ max v 20 gate-source voltage c/w maximum junction-to-ambient a d 80 w t a =70c 1.8 t a =25c c/w r q ja 37 66 junction and storage temperature range -55 to 150 power dissipation a p d 45 AON2260 60v n-channel mosfet general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 the AON2260 combines advanced trench mosfet technol ogy with a low resistance package to provide extrem ely low r 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 30 a 36 44 t j =125c 61.5 75 42 53 m w g fs 21 s v sd 0.75 1 v i s 3.5 a c iss 426 pf c oss 50 pf c rss 5 pf r g 1 2.3 3.5 w q g (10v) 6.1 12 nc q g (4.5v) 2.6 6 nc q gs 1.2 nc q gd 0.8 nc t d(on) 3 ns t 2.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =30v, i d =6a gate source charge gate drain charge total gate charge turn-on rise time v =10v, v =30v, r =5 w , zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =6a forward transconductance diode forward voltage v gs =4.5v, i d =4a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =6a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =20v t r 2.5 ns t d(off) 15 ns t f 1.5 ns t rr 27 ns q rr 12 nc body diode reverse recovery charge i f =6a, di/dt=100a/ m s turn-on rise time turn-off delaytime i f =6a, di/dt=100a/ m s v gs =10v, v ds =30v, r l =5 w , r gen =3 w turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AON2260 60v n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 30 40 50 60 0 3 6 9 12 15 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =4a v gs =10v i d =6a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 8v 10v 4.5v 3.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =6a 25 c 125 c AON2260 60v n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 17 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =30v i d =6a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse safe operating area (note f) r q ja =80 c/w AON2260 60v n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr AON2260 60v n-channel mosfet www.freescale.net.cn 5 / 5
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